6
RF Device Data
Freescale Semiconductor
MRF6S21190HR3 MRF6S21190HSR3
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
IMD, INTERMODULATION DISTORTION (dBc)
?70
?20
1 10010
?40
?50
?30
7th Order
5th Order
3rd Order
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
TWO?TONE SPACING (MHz)
Figure 9. Output Peak-to-Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
?1
?3
?5
40
Actual
Ideal
0
?2
?4
OUTPUT COMPRESSION AT THE 0.01%
PROBABILITY ON CCDF (dB)
1 10010
VDD
= 28 Vdc, P
out
= 175 W (PEP), I
DQ
= 1600 mA
Two?Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
IM3?U
?10
?20
?40
IMD, INTERMODULATION DISTORTION (dBc)
20
50
200
VDD
= 28 Vdc, I
DQ
= 1600 mA
f1 = 2135 MHz, f2 = 2145 MHz
Two?Tone Measurements, 10 MHz Tone Spacing
?50
?30
IM3?L
IM5?U
IM5?L
IM7?L
IM7?U
80
90
15
45
40
35
30
25
20
η
D
,
DRAIN EFFICIENCY (%)
?3 dB = 85.07 W
200
13
19
0
60
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
VDD
= 28 Vdc
IDQ
= 1600 mA
f = 2140 MHz
TC
= ?30
C
25C
85C
10
1
18
15
30
20
10
η
D
,
DRAIN EFFICIENCY (%)
Gps
ηD
G
ps
, POWER GAIN (dB)
100
?30C
25C
85C
40
?60
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
G
ps
, POWER GAIN (dB)
13
17
0
14
15
16
28 V
IDQ
= 1600 mA
f = 2140 MHz
VDD
= 24 V
32 V
?60
60 70
?2 dB = 65.39 W
?1 dB = 43.79 W
100 200
ηD
30
14
16
17
50
VDD
= 28 Vdc, I
DQ
= 1600 mA, f = 2140 MHz
Single?Carrier W?CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MRF6S23100HSR5
MOSFET RF N-CHAN 28V 20W NI-780S
MRF6S23140HSR5
MOSFET RF N-CHAN 28W 28W NI-880S
MRF6S24140HS
IC MOSFET RF N-CHAN NI-880S
MRF6S27015NR1
IC MOSFET RF N-CHAN TO270-2
MRF6S27050HSR5
IC MOSFET RF N-CHAN NI-780S
MRF6S27085HSR5
MOSFET RF N-CHAN 28V 20W NI-780S
MRF6S9045NR1
MOSFET RF N-CH 28V 10W TO-270-2
MRF6S9060NR1
MOSFET RF N-CH 28V 14W TO-270-2
相关代理商/技术参数
MRF6S23100H
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF6S23100HR3
功能描述:射频MOSFET电源晶体管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S23100HR3_06
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF6S23100HR5
功能描述:射频MOSFET电源晶体管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S23100HSR3
功能描述:射频MOSFET电源晶体管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S23100HSR5
功能描述:射频MOSFET电源晶体管 HV6 2.3GHZ 20W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S23100HXX
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Dield Effect Transistors
MRF6S23140H_V2
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors